Excitonic effects at the temperature-dependent direct bandgap of Ge

Author:

Emminger Carola12ORCID,Samarasingha Nuwanjula S.1ORCID,Rivero Arias Melissa1,Abadizaman Farzin2ORCID,Menéndez José3ORCID,Zollner Stefan1ORCID

Affiliation:

1. Department of Physics, New Mexico State University 1 , Las Cruces, New Mexico 88003-8001, USA

2. Department of Condensed Matter Physics, Masaryk University 2 , 61137 Brno, Czech Republic

3. Department of Physics, Arizona State University 3 , Tempe, Arizona 85287-1504, USA

Abstract

The temperature dependence of the complex dielectric function ϵ1+iϵ2 of bulk Ge near the direct bandgap was investigated with spectroscopic ellipsometry at temperatures between 10 and 710 K. Second derivatives of the dielectric function with respect to energy are obtained using a digital linear filter method. A model that incorporates excitonic effects using the Tanguy model for the Hulthén potential [C. Tanguy, Phys. Rev. B 60, 10660 (1999)] was used to fit the dielectric function and its second derivatives simultaneously. Using k⋅p theory and literature values for effective masses, reasonable agreement with the experiment is obtained for ϵ2 up to room temperature using the direct bandgap and its broadening as the only adjustable parameters.

Funder

Air Force Office of Scientific Research

National Science Foundation

Operational Programme Research, Development and Education - Project “Postdoc2MUNI”

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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