Dopant profiling in silicon on sapphire using spreading resistance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94805
Reference4 articles.
1. A Spreading Resistance Technique for Resistivity Measurements on Silicon
2. IMMA applications to ion implantation in silicon-on-sapphire
3. Application of Multilayer Potential Distribution to Spreading Resistance Correction Factors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. JFET/SOS devices. I. Transistor characteristics and modeling results;IEEE Transactions on Electron Devices;1988-03
2. Silicon films on sapphire;Reports on Progress in Physics;1987-03-01
3. Channel doping profile of silicon‐on‐sapphire transistors;Journal of Applied Physics;1985-03-15
4. Automated Hall effect profiler for electrical characterisation of semiconductors;Electronics Letters;1985
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