Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3151913
Reference13 articles.
1. Silicon-based optoelectronics
2. Si microphotonics for optical interconnection
3. High-Speed Germanium-on-SOI Lateral PIN Photodiodes
4. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
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