Characterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts-Reference-Cited by-同舟云学术

Characterization of absorption losses in rear side n-type polycrystalline silicon passivating contacts

Published:2019 Issue: Volume: Page:
ISSN:0094-243X
Container-title:15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
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Author:

Fırat Meriç,Payo María Recamán,Duerinckx Filip,Luchies Jan-Marc,Lenes Martijn,Poortmans Jef

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5123831

Reference20 articles.

1. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

2. Surface passivation of crystalline silicon solar cells: Present and future

3. Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions

4. Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

5. R. C. G. Naber, M. Lenes, J. R. M. Luchies, J. Zhai, D. Liu, Z. Wang, and F. Li, “BBr3 Emitter Passivation by Ultra-Thin Boron Doped LPCVD Polysilicon Layers,” Proceedings of the 33rd European Photovoltaic Solar Energy and Conference, (Amsterdam, the Netherlands, 2017), pp. 472–475.

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