Theory of Transverse Extension of Gunn Domains
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658747
Reference8 articles.
1. A voltage tunable Gunn-effect oscillator
2. Functional bulk semiconductor oscillators
3. Synthesis of complex electronic functions by solid state bulk effects
4. Digital logic-circuit applications of Gunn diodes
5. Electrical properties of a GaAs-W junction grown from the vapour phase
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1. Transport properties in semiconductor-gas discharge electronic devices;Solid-State Electronics;2009-09
2. Stimulated emission from a Fabry‐Perot cavity GaAs/Ga 0.68 Al 0.32 As Gunn laser;physica status solidi (c);2005-05
3. Slow domains in semi-insulating GaAs;Journal of Applied Physics;2001-07
4. Design and analysis of heterojunction bipolar transferred electron devices;IEEE Transactions on Electron Devices;2001
5. New transverse-domain formation mechanism in a quarter-micrometre-gate HEMT;Electronics Letters;1988
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