Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2888967
Reference6 articles.
1. Growth and characterization of p-type HgTe/Hg1−xCdxTe single quantum wells using nitrogen and arsenic
2. Heterostructure infrared photovoltaic detectors
3. p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors
4. Growth and properties of In- and As-doped HgCdTe by MBE
5. Band structure and its temperature dependence for type-IIIHgTe/Hg1−xCdxTesuperlattices and their semimetal constituent
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