Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3634032
Reference18 articles.
1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
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3. Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications
4. AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$
5. High power AlGaN/GaN HFETs on 4 inch Si substrates
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1. Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors;Electronics;2023-10-27
2. Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier;Electronics;2022-04-22
3. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer;Materials;2022-01-18
4. Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga2O3 back barrier;Journal of Physics D: Applied Physics;2021-11-02
5. Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures*;Chinese Physics B;2020-08-01
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