Terahertz emission induced by optical beating in nanometer-length field-effect transistors-Reference-Cited by-同舟云学术

Terahertz emission induced by optical beating in nanometer-length field-effect transistors

Published:2012-05-15 Issue:10 Volume:111 Page:103707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nouvel P.,Torres J.,Blin S.,Marinchio H.,Laurent T.,Palermo C.,Varani L.,Shiktorov P.,Starikov E.,Gruzinskis V.,Teppe F.,Roelens Y.,Shchepetov A.,Bollaert S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4718445

Reference31 articles.

1. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current

2. Nonlinear theory of the current instability in a ballistic field-effect transistor

3. Numerical study of the current instability in a two-dimensional electron fluid

4. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

5. Detection of terahertz radiation in gated two-dimensional structures governed by dc current

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