Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 107
Author:
Affiliation:
1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
2. National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW, United Kingdom
Funder
the UK Department for Business, Innovation, and Skills
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953872
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