Fabrication and characterization of wüstite-based epitaxial thin films: p-type wide-gap oxide semiconductors composed of abundant elements-Reference-Cited by-同舟云学术

Fabrication and characterization of wüstite-based epitaxial thin films: p-type wide-gap oxide semiconductors composed of abundant elements

Published:2014-09-15 Issue:11 Volume:105 Page:112105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seki Munetoshi¹,Takahashi Masanao¹,Adachi Masaki¹,Yamahara Hiroyasu¹,Tabata Hitoshi¹

Affiliation:

1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

Futaba Electronics Memorial Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference28 articles.

1. Stabilization of Antiferromagnetic Order in FeO Nanolayers

2. Enhancement of magnetoresistance by ultra-thin Zn wüstite layer

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4. Generation of methane in the Earth's mantle: In situ high pressure-temperature measurements of carbonate reduction

5. Transition Metals Monoxides. An LDA+U Study

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