MgF2 as an interlayer to enhance the stability of thermally activated delayed fluorescence based organic electroluminescence devices

Abstract

Stability is one of the major challenges in organic semiconductor based optoelectronic devices. A comparative study of thermally activated delayed fluorescence (TADF) based organic light emitting diodes (OLEDs) with alkali-halide lithium fluoride (LiF) vs alkaline halide magnesium fluoride (MgF2) inorganic electron injection interlayers is presented. A TADF emitter 4CzIPN doped in CBP is used as an active layer (thickness = 15 nm @6wt. % doping) in an OLED structure: Glass/ITO/PEDOT:PSS/NPD/CBP/CBP:4CzIPN/TPBi/interlayer/Al. Prior to this comparative study, a separate exercise is carried out to obtain an optimal thickness of an MgF2 interlayer on the basis of leakage current and efficiency in the TADF-OLEDs. OLEDs with an LiF interlayer showed an external quantum efficiency (EQE) of 19.7% in comparison with an MgF2 interlayer-based OLED showed slightly lower average EQE ∼19.1% at a luminance level of 100 cd/m2; these efficiency numbers are averaged over ∼60 OLEDs. These slight changes in EQE are supported by the relative photoluminescence quantum yield measurements with a whole device stack. However, alkaline halide MgF2 based TADF-OLEDs showed approximately seven-fold enhancement in the stability (LT60) under identical operating conditions. In situ photoluminescence monitoring of operational TADF-OLEDs confirmed that the probable cause of reduced lifetime is degradation of an LiF/TPBi interface.