Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection-Reference-Cited by-同舟云学术

Bright electroluminescence in ambient conditions from WSe2 p-n diodes using pulsed injection

Published:2019-07 Issue:1 Volume:115 Page:011103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Kevin¹^ORCID,Ahn Geun Ho¹²^ORCID,Cho Joy¹²,Lien Der-Hsien¹²,Amani Matin¹²,Desai Sujay B.¹²^ORCID,Zhang George¹²^ORCID,Kim Hyungjin¹²,Gupta Niharika¹²^ORCID,Javey Ali¹²,Wu Ming C.¹^ORCID

Affiliation:

1. Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Funder

Directorate for Engineering

U.S. Department of Energy

National Defense Science and Engineering Graduate

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5100306

Reference24 articles.

1. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

2. High Performance Multilayer MoS2 Transistors with Scandium Contacts

3. A sub-thermionic MoS2 FET with tunable transport

4. Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

5. Single-layer MoS2 transistors

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