Measurements of the Thermal‐Emission Rates of Electrons and Holes at the Gold Centers in Silicon Using the Small‐Signal‐Pulsed Field Effect
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658432
Reference35 articles.
1. Measurement of Germanium Surface States by Pulsed Channel Effect
2. Cross sections of midgap surface states in silicon by pulsed field effect experiment
3. Electrical properties of surface states on silicon surfaces
4. Electrical properties of surface states on silicon surfaces
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Profiling interface traps in MOS transistors by the DC current-voltage method;IEEE Electron Device Letters;1996-02
2. Thermal emission and capture rates of holes at the gold donor level in silicon;Journal of Applied Physics;1987-12-15
3. Emission coefficients for electron and hole traps in silicon;Solid-State Electronics;1979-07
4. Electrical and Optical Properties of MIS Devices;Semiconducting Devices;1976
5. ACCURATE CAPACITANCE CALCULATIONS FORPNJUNCTIONS CONTAINING TRAPS;Applied Physics Letters;1971-03
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