Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1625092
Reference14 articles.
1. Stresses during Silicide Formation: A Review
2. In situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49–C54 transformation
3. TEM analysis of an additional metal-rich component at the C49–C54 transformation in Ti/Si thin films capped with TiN
4. Origin of the C49–C54 volume anomaly in TiSi2 thin films: an in-situ XRD and TEM analysis
5. Diffusion, Complexing and Precipitation of Transition Metals in Silicon
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