An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film-Reference-Cited by-同舟云学术

An analysis of “non-lattice” oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film

Published:2015-02-02 Issue:5 Volume:106 Page:053504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Min Kyu¹^ORCID,Kim Gun Hwan¹,Ju Hyunsu¹,Lee Jeon-Kook²,Ryu Han-Cheol³

Affiliation:

1. New Memory Lab., Semiconductor Research Center, Samsung Electronics, Gyeonggi 445-701, South Korea

2. Future Convergence Research Division, Interface Control Research Center, Korea Institute Science and Technology (KIST), Seoul 136-791, South Korea

3. Department of Car Mechatronics, Sahmyook University, Seoul 139-800, South Korea

Funder

This research was supported by the basic science research program though the national research fundation of korea funded by the ministry of science, ICT and Future Planning

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4907704

Reference16 articles.

1. Nanoionics-based resistive switching memories

2. The missing memristor found

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

5. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing the upconversion of Er³⁺ incorporated BaTiO₃ by introducing oxygen vacancies;Physical Chemistry Chemical Physics;2024

2. The impact of oxygen vacancy defect density on the nonlinearity and short-term plasticity of TiO₂-based exponential selector;Nanotechnology;2023-06-19

3. Improved resistive switching performance and in-depth mechanism analysis in Mn-doped SrTiO3-based RRAM;Materials Today Communications;2023-06

4. Self-rectifying resistive memory in passive crossbar arrays;Nature Communications;2021-05-20

5. Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device;Applied Surface Science;2021-05