Dependence of Andreev reflection and Schottky barriers on GaMnAs/Nb interface treatment
Author:
Affiliation:
1. Department of Physics, Miami University, Oxford, Ohio 45056, USA
2. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4907702
Reference18 articles.
1. Transition from metallic to tunneling regimes in superconducting microconstrictions: Excess current, charge imbalance, and supercurrent conversion
2. Measuring the Spin Polarization of a Metal with a Superconducting Point Contact
3. Probing spin polarization with Andreev reflection: A theoretical basis
4. Determination of the Spin Polarization of Half-MetallicCrO2by Point Contact Andreev Reflection
5. Point-contact Andreev-reflection spectroscopy of doped manganites: Charge carrier spin-polarization and proximity effects (Review Article)
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