Transconductance sensitivity enhancement in gated-MIS(p) tunnel diode by self-protective effective local thinning mechanism
Author:
Affiliation:
1. Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4960799
Reference13 articles.
1. Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS Gated-MIS Tunnel Transistor
2. Photosensing by Edge Schottky Barrier Height Modulation Induced by Lateral Diffusion Current in MOS(p) Photodiode
3. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
4. The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
5. On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures
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1. Three-Level MIS Antifuse Formed by Polarity-Dependent Dielectric Breakdown on 3.5-nm SiO2 for One-Time Programmable Application;IEEE Transactions on Electron Devices;2023-08
2. Improved Two States Characteristics in MIS Tunnel Diodes by Oxide Local Thinning Enhanced Transient Current Behavior;IEEE Transactions on Electron Devices;2022-12
3. Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes;IEEE Access;2021
4. Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor;IEEE Transactions on Electron Devices;2019-01
5. Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate;IEEE Transactions on Electron Devices;2018-05
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