Influence of 100MeV oxygen ion irradiation on Ni∕n‐Si (100) Schottky barrier characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2885061
Reference14 articles.
1. Room-temperature hydrogen gas sensor
2. Molecular control over Au/GaAs diodes
3. The Interface Phase and the Schottky Barrier for a Crystalline Dielectric on Silicon
4. Increasing the effective height of a Schottky barrier using low‐energy ion implantation
5. Modification of Schottky barriers in silicon by reactive ion etching with NF3
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