Dopant activation in subamorphized silicon upon laser annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2335950
Reference20 articles.
1. Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
2. Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctions
3. Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing
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