Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2946655
Reference19 articles.
1. GaN-Based Devices on Si
2. Growth of blue GaN LED structures on 150-mm Si(111)
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5. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy
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