Electrical and optical characterization of back‐to‐back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double‐heterostructure diodes-Reference-Cited by-同舟云学术

Electrical and optical characterization of back‐to‐back Schottky (Al,Ga)As/NiAl/(Al,Ga)As molecular beam epitaxially grown double‐heterostructure diodes

Published:1990-03-12 Issue:11 Volume:56 Page:1043-1045
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cheeks T. L.,Sands T.,Nahory R. E.,Harbison J.,Tabatabaie N.,Gilchrist H. L.,Wilkens B. J.,Keramidas V. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102609

Reference10 articles.

1. Epitaxial growth of GaAs/NiAl/GaAs heterostructures

2. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures

3. Electrical characterisation of epitaxially overgrown Si in Si<111>/CoSi2/Si metal base transistor

4. Molecular-beam epitaxial growth and characterization of GaAs on epitaxial CoSi2 films on Si(111)

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