Dependence of the properties of boron‐trifluoride‐based amorphous silicon carbide on preparation conditions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350422
Reference14 articles.
1. Substitutional doping of amorphous silicon
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1. Scaled plane-wave Born cross sections for atoms and molecules;Reviews of Modern Physics;2016-05-19
2. BF3 Valence and Rydberg States As Probed by Electron Energy Loss Spectroscopy and ab Initio Calculations;The Journal of Physical Chemistry A;2014-11-06
3. Elastic scattering of low-energy electrons by BF3;The European Physical Journal D;2014-02
4. Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performance;Journal of Non-Crystalline Solids;2004-06
5. A simple diborane-degradation model for controlling p-type doping of microcrystalline silicon;Solar Energy Materials and Solar Cells;2002-05
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