Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As-Reference-Cited by-同舟云学术

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Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As

Published:2013-07-08 Issue:2 Volume:103 Page:022401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Yuanyuan,Cao Y. F.,Wei G. N.,Li Yanyong,Ji Y.,Wang K. Y.,Edmonds K. W.,Campion R. P.,Rushforth A. W.,Foxon C. T.,Gallagher B. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4813085

Reference23 articles.

1. Current-driven excitation of magnetic multilayers

2. Emission of spin waves by a magnetic multilayer traversed by a current

3. Current-Induced Switching of Domains in Magnetic Multilayer Devices

4. Magnetization reversal by injection and transfer of spin: experiments and theory

5. Current-induced domain-wall switching in a ferromagnetic semiconductor structure

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