Microstructure and ferroelectric properties of low-fatigue epitaxial, all (001)-oriented (Bi,La)4Ti3O12∕Pb(Zr0.4Ti0.6)O3∕(Bi,La)4Ti3O12 trilayered thin films on (001) SrTiO3 substrates-Reference-Cited by-同舟云学术

Microstructure and ferroelectric properties of low-fatigue epitaxial, all (001)-oriented (Bi,La)4Ti3O12∕Pb(Zr0.4Ti0.6)O3∕(Bi,La)4Ti3O12 trilayered thin films on (001) SrTiO3 substrates

Published:2005-07 Issue:1 Volume:98 Page:014101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bao Dinghua,Zhu Xinhua,Alexe Marin,Hesse Dietrich

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1946913

Reference28 articles.

1. Ferroelectric Memories

2. Lanthanum-substituted bismuth titanate for use in non-volatile memories

3. The Physics of Ferroelectric Memories

4. Abnormal ferroelectric properties of compositionally graded Pb(Zr,Ti)O3 thin films with LaNiO3 bottom electrodes

5. Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Films of Uniform a -Axis Orientation on Silicon Substrates

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2. Synthesis and characterization of Bi4Ti3O12, (Bi3.25La0.75)Ti3O12, and Bi4Ti3O12/(Bi3.25La0.75)Ti3O12 multilayered films prepared using novel photochemical sol–gel method;Materials Letters;2012-01

3. The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films;Thin Solid Films;2011-07

4. The Effect of La-Doped Bi4Ti3O12 Buffer Layer on Crystallinity and Ferroelectric Properties of PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 Multilayered Thin Films;Integrated Ferroelectrics;2011-01

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