Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3250435
Reference13 articles.
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3. A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique [MOSFETs]
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