Carrier diffusion and recombination influencing gain and current profiles in planar injection lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334134
Reference12 articles.
1. Role of the conductivity of the confining layers in DH-laser spatial hole burning effects
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3. Theory of the double heterostructure laser: III. Self-consistent calculations of the electrical and optical characteristics
4. An analytical solution of the lateral current spreading and diffusion problem in narrow oxide stripe (GaAl)As/GaAs DH lasers
5. Theoretical analysis of current spreading in stripe-geometry injection lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-consistent solution of the diffusion equation for an active optical semiconductor device;Semiconductor Science and Technology;1995-07-01
2. Principles of Modelling the Physical Phenomena in Junction Lasers;Physics of Semiconductor Lasers;1991
3. Nonlinear characterization of modal gain and effective index saturation in channeled-substrate-planar double-heterojunction lasers;IEEE Journal of Quantum Electronics;1989-07
4. INSTABILITIES IN SEMICONDUCTOR LASERS;Optical Nonlinearities and Instabilities in Semiconductors;1988
5. Lateral current spreading in DH-lasers above threshold;IEE Proceedings J Optoelectronics;1986
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