Structure, band gap, and Mn-related mid-gap states in epitaxial single crystal (Zn1−xMgx)1−yMnyO thin films-Reference-Cited by-同舟云学术

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Structure, band gap, and Mn-related mid-gap states in epitaxial single crystal (Zn1−xMgx)1−yMnyO thin films

Published:2013-05-07 Issue:17 Volume:113 Page:173701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhu Dapeng,Liu Guolei,Xiao Shuqin,Yan Shishen,He Shumin,Cai Li,Li Qinghao,Cao Qiang,Hu Shujun,Chen Yanxue,Kang Shishou,Mei Liangmo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4803141

Reference41 articles.

1. Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

2. Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric

3. Recent progress in research on MgxZn1–xO alloys

4. Refractive indices and absorption coefficients of MgxZn1−xO alloys

5. UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films*;Chinese Physics B;2021-12-01

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