Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

Abstract

The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies from x rays to microwaves. In the terahertz (THz) frequency range (0.1–10 THz), this has led to the development of optical modulators, nonlinear sources, and photodetectors with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report room temperature THz detectors made of large-area SLG, grown by chemical vapor deposition (CVD) and integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations of SLG on Al2O3 with and without large-area CVD hexagonal boron nitride capping to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ∼5 ns and noise equivalent powers (NEPs) ∼1 nW Hz−1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered material heterostructures for THz detection.