Enhanced <i>T</i>C in SrRuO3/DyScO3(110) thin films with high residual resistivity ratio-Reference-Cited by-同舟云学术

Enhanced TC in SrRuO3/DyScO3(110) thin films with high residual resistivity ratio

Published:2023-11-01 Issue:11 Volume:11 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Schreiber Nathaniel J.¹^ORCID,Miao Ludi²^ORCID,Nair Hari P.¹^ORCID,Ruf Jacob P.²³^ORCID,Bhatt Lopa⁴,Birkholzer Yorick A.¹^ORCID,Kotsonis George N.¹^ORCID,Kourkoutis Lena F.⁴⁵^ORCID,Shen Kyle M.²⁵^ORCID,Schlom Darrell G.¹⁵⁶^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853, USA

2. Department of Physics, Laboratory of Atomic and Solid State Physics, Cornell University 2 , Ithaca, New York 14853, USA

3. Max-Planck-Institute for Chemical Physics of Solids 3 , Nöthnitzer Str. 40, 01187 Dresden, Germany

4. School of Applied and Engineering Physics, Cornell University 4 , Ithaca, New York 14853, USA

5. Kavli Institute at Cornell for Nanoscale Science 5 , Ithaca, New York 14853, USA

6. Leibniz-Institut für Kristallzüchtung 6 , Max-Born-Str. 2, 12489 Berlin, Germany

Abstract

Epitaxial untwinned SrRuO3 thin films were grown on (110)-oriented DyScO3 substrates by molecular-beam epitaxy. We report an exceptional sample with a residual resistivity ratio (RRR), ρ [300 K]/ρ [4 K] of 205 and a ferromagnetic Curie temperature, TC, of 168.3 K. We compare the properties of this sample to other SrRuO3 films grown on DyScO3(110) with RRRs ranging from 8.8 to 205, and also compare it to the best reported bulk single crystal of SrRuO3. We determine that SrRuO3 thin films grown on DyScO3(110) have an enhanced TC as long as the RRR of the thin film is above a minimum electrical quality threshold. This RRR threshold is about 20 for SrRuO3. Films with lower RRR exhibit TCs that are significantly depressed from the intrinsic strain-enhanced value.

Funder

National Science Foundation

Gordon and Betty Moore Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0156344/18198970/111101_1_5.0156344.pdf

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