Nonlinear variations in the electronic structure of II–VI and III–V wurtzite semiconductors with biaxial strain
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3578193
Reference22 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures
4. Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain
5. Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures
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