GaSb-based diode lasers with asymmetric coupled quantum wells
Author:
Affiliation:
1. State University of New York at Stony Brook, Stony Brook, New York 11794, USA
2. Texas A&M University, College Station, TX 77843, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5046426
Reference12 articles.
1. Type-I Diode Lasers for Spectral Region Above 3 μm
2. Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers
3. Type-I QW cascade diode lasers for spectral region above 3 μm
4. Extraordinarily wide optical gain spectrum in 2.2–2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers
5. Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers
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1. Carrier tunneling and transport in coupled quantum wells: Modeling and experimental verification;Applied Physics Letters;2024-04-15
2. GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing;Frontiers in Electronic Materials;2022-06-16
3. Dual-Wavelength Y-Branch DBR Lasers With 100 mW of CW Power Near 2 μm;IEEE Photonics Technology Letters;2020-09-01
4. Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μm;Semiconductor Science and Technology;2020-01-17
5. Dual-wavelength operation of GaSb-based diode lasers with asymmetric coupled quantum wells;Conference on Lasers and Electro-Optics;2019
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