Effects of oxygen contamination on diffusion length in p+−n GaInNAs solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1542937
Reference18 articles.
1. Accelerated publication 30.2% efficient GaInP/GaAs monolithic two-terminal tandem concentrator cell
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
4. 1-eV solar cells with GaInNAs active layer
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1. Impact of CdSe/ZnS quantum dot spectrum converters on InGaP/GaAs/Ge multi-junction solar cells;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-01
2. GaInN/GaN p-i-n light-emitting solar cells;physica status solidi (c);2010-08-03
3. Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers;IEEE Electron Device Letters;2009-03
4. Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He$^{+}$ Irradiations;IEEE Transactions on Nuclear Science;2007-12
5. Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy;2007 Spanish Conference on Electron Devices;2007-01
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