High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment

Abstract

Quantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan. However, the inherent differences in the properties of charge transport layer materials inevitably lead to charge injection imbalances and low device performance. Herein, we developed a simple technique by using femtosecond laser scanning over the QLED devices. The results indicate that scanning with a femtosecond laser improves the conductivity of the hole transport layer and increases the external quantum efficiency of the QLED devices. Our work provides an effective route for realizing high performance QLED devices with efficient post-treatment.