Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus-Reference-Cited by-同舟云学术

Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus

Published:2016-12-26 Issue:26 Volume:109 Page:261901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Kuilong¹²,Ang Kah-Wee³,Lv Youming¹,Liu Xinke¹

Affiliation:

1. College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, People's Republic of China

2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060, People's Republic of China

3. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583

Funder

A*Star Science and Engineering Research Council Grant

CAS International Collaboration and Innovation Program On High Mobility Materials Engineering, National University of Singapore Faculty Research Committee Grants

Public Welfare capacity building in Guangdong Province

the Science and Technology Foundation of Shenzhen

National Natural Science Foundation of China (NSFC)

Science and Technology Commission of Shanghai Municipality (STCSM)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973363

Reference34 articles.

1. Black phosphorus field-effect transistors