Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4821343
Reference31 articles.
1. A. A. Berg and P. J. Dean, Light-Emitting Diodes (Clarendon, Oxford, 1976), pp. 11–35.
2. Giant electric fields in unstrained GaN single quantum wells
3. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
4. Extremely sharp dependence of the exciton oscillator strength on quantum-well width in theGaN/AlxGa1−xNsystem: The polarization field effect
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1. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06
2. Semipolar III-N Layers Deposited on a Nanostructured Silicon Substrate: Process and Luminescence Specificity;Bulletin of the Russian Academy of Sciences: Physics;2022-07
3. Microstructure of Epitaxial GaN Layers Synthesized on Nanoprofiled Si(001) Substrates;Crystallography Reports;2021-07
4. TEM investigation of microstructure of semipolar GaN layers grown on nano-patterned Si(001) substrates;Journal of Physics: Conference Series;2020-12-01
5. Semi‐Polar InGaN‐Based Green Light‐Emitting Diodes Grown on Silicon;physica status solidi (a);2019-11-11
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