Electron mobility and velocity in Al<sub>0.45</sub>Ga<sub>0.55</sub>N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications-Reference-Cited by-同舟云学术

Electron mobility and velocity in Al_0.45Ga_0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications

Published:2022-03-07 Issue:10 Volume:120 Page:103505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ye Hansheng¹^ORCID,Gaevski Mikhail²^ORCID,Simin Grigory²^ORCID,Khan Asif²^ORCID,Fay Patrick¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

2. College of Engineering and Computing, University of South Carolina, Columbia, South Carolina 29208, USA

Abstract

Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) for RF power due to its high critical field, excellent transport properties, and potential for operation in extreme environments. However, the effects of temperature on the transport properties are not fully understood. Here, Al0.62Ga0.38N/Al0.45Ga0.55N HEMTs have been fabricated and characterized up to 150 °C at DC and RF to evaluate the effect of temperature on electron mobility and carrier velocity. Measured results indicate that both mobility and carrier velocity exhibit modest dependence on temperature, suggesting that AlGaN channel HEMTs are promising for future RF power applications.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0084022

Reference29 articles.

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