Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

Published:2009-04-13 Issue:15 Volume:94 Page:153506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Brown David F.,Chu Rongming,Keller Stacia,DenBaars Steven P.,Mishra Umesh K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3122347

Reference16 articles.

1. High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate

2. Y. F. Wu, M. Moore, A. Saxler, T. Wisleder, and P. Parikh, Proceedings of the Device Research Conference, June 2006 (unpublished).

3. Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz

4. High-power AlGaN/GaN HEMTs for Ka-band applications

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