Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure-Reference-Cited by-同舟云学术

Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure

Published:2019-03-21 Issue:11 Volume:125 Page:115702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bercha Artem¹^ORCID,Trzeciakowski Witold¹^ORCID,Gładysiewicz-Kudrawiec Marta²,Ivonyak Yurii¹,Grzanka Szymon¹

Affiliation:

1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

2. Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Funder

Narodowe Centrum Nauki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5090099

Reference28 articles.

1. Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

2. Near-field photocurrent spectroscopy: A novel technique for studying defects and aging in high-power semiconductor lasers

3. Extrinsic contributions to photocurrents from quantum-wells

4. Pressure tuning of laser diodes in the near-infrared up to 1850 nm: Operational characteristics and reliability studies

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