Distinction between electron and hole traps in semi‐insulating GaAs-Reference-Cited by-同舟云学术

Distinction between electron and hole traps in semi‐insulating GaAs

Published:1996-05-01 Issue:9 Volume:79 Page:6951-6953
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Kiliulis R.¹,Kazukauskas V.¹,Bourgoin J. C.²

Affiliation:

1. Semiconductor Physics Department, Vilnius University, Sauletekio 10, 2054 Vilnius, Lithuania

2. Groupe de Physique des Solides, Université Paris 7, Tour 23, 2 Place Jussieu, 75251 Paris Cedex 05, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference24 articles.

1. J. C. Bourgoin, H. J. von Bardeleben, and D. Stievenard, J. Appl. Phys. 64, R65 (1988).JAPIAU0021-8979

2. H. J. von Bardeleben, J. C. Bourgoin, and D. Stievenard, Appl. Phys. Lett. 53, 1089 (1988).APPLAB0003-6951

3. S. Alaya, H. Maaref, H. J. von Bardeleben, and J. C. Bourgoin, Appl. Phys. Lett. 56, 1877 (1990).APPLAB0003-6951

4. J. P. Fillard, M. Castagné, J. Bonnafé, and M. de Murcea, J. Appl. Phys. 54, 6767 (1983).JAPIAU0021-8979

5. H. J. von Bardeleben, D. Stievenard, H. R. Zelsmann, and J. C. Bourgoin, in Semi-Insulating III-V Materials, edited by G. Grossmann and L. Lebedo (Hilger, Bristol, 1988), p. 127.

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