Raman scattering investigation of large positive magnetoresistance material WTe2
Author:
Affiliation:
1. Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2. Collaborative Innovation Center of Quantum Matter, Beijing, China
Funder
National Natural Science Foundation of China (NSFC)
Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913680
Reference14 articles.
1. Large, non-saturating magnetoresistance in WTe2
2. Electronic Structure Basis for the Extraordinary Magnetoresistance inWTe2
3. Metal-Insulator-Like Behavior in Semimetallic Bismuth and Graphite
4. Reentrant Metallic Behavior of Graphite in the Quantum Limit
5. Metal-metal vs tellurium-tellurium bonding in WTe2 and its ternary variants TaIrTe4 and NbIrTe4
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