Solid‐state epitaxy of osmium silicide on (111)Si under reducing atmosphere
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344185
Reference8 articles.
1. Low earth orbit environmental effects on osmium and related optical thin-film coatings
2. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
3. Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)
4. Kinetics of Pd2Si layer growth measured by an x‐ray diffraction technique
5. Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2in sputtered Ti films on (001)Si by rapid thermal annealing
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1. Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces;Physical Review B;2017-02-22
2. Electronic structure and photoelectric properties of OsSi2 epitaxially grown on a Si(111) substrate;Acta Physica Sinica;2012
3. X-ray diffraction analysis of an osmium silicide epilayer grown on Si(100) by molecular beam epitaxy;Journal of Crystal Growth;2006-09
4. Formation of optically active osmium silicide in silica using ion implantation and thermal annealing;Journal of Non-Crystalline Solids;2006-07
5. Molecular beam epitaxial growth of osmium silicides;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
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