Author:
Sano H.,Suda A.,Hatanaka T.,Mizutani G.,Otsuka N.
Subject
General Physics and Astronomy
Reference23 articles.
1. E. C. Larkins and J. S. Harris, Jr., inMolecular Beam Epitaxy, edited by R. F. C. Farrow (Noyes, Park Ridge, NJ, 1995), p. 114.
2. Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures
3. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
4. Growth temperature dependence in molecular beam epitaxy of gallium arsenide
5. N. X. Nguyen and U. K. Mishra, inProperties of Gallium Arsenide, 3rd ed., edited by M. R. Brozel and G. E. Stillman (INSPEC, London, 1996), p. 689.
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