Gas source iodinen‐type doping of molecular beam epitaxially grown CdTe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107039
Reference17 articles.
1. Hg1−xCdxTe‐Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications
2. Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory
3. Growth of high mobilityn‐type CdTe by photoassisted molecular beam epitaxy
4. p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy
5. Arsenic‐dopedp‐CdTe layers grown by organometallic vapor phase epitaxy
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2. Properties of Iodine-Doped CdTe Layers on (211) Si Grown at High Substrate Temperatures by MOVPE;Journal of Electronic Materials;2020-08-28
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