Demonstration of a GaAs-based 1550-nm continuous wave photomixer
Author:
Affiliation:
1. Terahertz Sensor Laboratory, Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435, USA
2. Mound Laser and Photonics Center, Inc., Kettering, Ohio 45420, USA
Funder
U.S. Army Research Laboratory (ARL)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4906284
Reference18 articles.
1. Generation and detection of terahertz radiation by electro-optical process in GaAs using 1.56μm fiber laser pulses
2. High power terahertz generation using 1550 nm plasmonic photomixers
3. THz generation at 155 µm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions
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3. 1550 nm Compatible Ultrafast Photoconductive Material Based on a GaAs/ErAs/GaAs Heterostructure;Advanced Optical Materials;2021-04-25
4. The Measurement of Charge Carrier Lifetime in SIGaAs: Cr and EL2-GaAs by Pump-Probe Terahertz Spectroscopy;Russian Physics Journal;2020-08
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