Electron trapping process in ferroelectric lead–zirconate–titanate thin-film capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121818
Reference21 articles.
1. An experimental 512-bit nonvolatile memory with ferroelectric storage cell
2. Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications
3. Ferroelectric Memories
4. Dielectric Properties of (Ba, Sr)TiO3Thin Films Deposited by RF Sputtering
5. Fatigue and switching in ferroelectric memories: Theory and experiment
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1. Enhancement of Ion-Sensitive Field-Effect Transistors through Sol-Gel Processed Lead Zirconate Titanate Ferroelectric Film Integration and Coplanar Gate Sensing Paradigm;Chemosensors;2024-07-09
2. Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation;Journal of Electronic Materials;2016-04-18
3. Impact of charge trapping on the ferroelectric switching behavior of doped HfO2;physica status solidi (a);2015-10-21
4. Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate–titanate film;Nanoscale;2014
5. Temperature dependence of dielectric properties for Ba(Zr0.25Ti0.75)O3 thin films obtained from the soft chemical method;Materials Chemistry and Physics;2007-10
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