Behavior of diffused planar germanium thermometers at temperatures below 1 K
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1137508
Reference10 articles.
1. Low Temperature Silicon Thermometer and Bolometer
2. Diffused Semiconductor Low Temperature Thermometers
3. Some observations on resistance thermometry below 1 K
4. Application of germanium resistance thermometers below 0.1 K
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1. Nonlinearities in the current–voltage characteristics of neutron transmutation doped germanium at millikelvin temperatures;Journal of Applied Physics;1997-10
2. Cryogenic thermometry: a review of progress since 1982;Cryogenics;1997-07
3. Properties of NTD #23 Ge sensors and RuO2 films as thermal sensors for bolometers;Journal of Low Temperature Physics;1993-11
4. Analysis of internal heat transfer in germanium resistance thermometers;Review of Scientific Instruments;1993-03
5. Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime;Philosophical Magazine B;1992-04
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