Theory for high Q p-n junction avalanche inductors-Reference-Cited by-同舟云学术

Theory for high Q p-n junction avalanche inductors

Published:2006-07-03 Issue:1 Volume:89 Page:013501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Chie-In,Pan Dee-Son

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2218773

Reference8 articles.

1. Physical modeling of spiral inductors on silicon

2. Improved quality-factor of 0.18-/spl mu/m CMOS active inductor by a feedback resistance design

3. G. A. M. Hurkx, P. G. M. Baltus, J. A. M. de Boet, J. A. M. Geelen, and J. J. E. M. Hageraats, Bipolar BiCMOS Circuits and Technology Meeting, 1995 (IEEE, New York, 1995), p. 125–128.

4. Mixed tunneling and avalanche mechanisms in p-n junctions and their effects on microwave transit-time devices

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