Growth of silicon on tungsten diselenide
Author:
Affiliation:
1. Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
Funder
China Scholarship Council (CSC)
Stichting voor Fundamenteel Onderzoek der Materie (FOM)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4972036
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1. Electric Field Effect in Atomically Thin Carbon Films
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4. Atomically ThinMoS2: A New Direct-Gap Semiconductor
5. From Bulk to Monolayer MoS2: Evolution of Raman Scattering
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