Photoluminescence of an Al0.5Ga0.5As/GaAs multiple quantum well in the temperature range from 5 to 400 K
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3256222
Reference18 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Temperature dependence of photoluminescence from GaAs single and multiple quantum‐well heterostructures grown by molecular‐beam epitaxy
3. Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells
4. The excitonic properties and temperature behaviour of the photoluminescence from GaAs-GaAlAs multiple quantum well structures
5. Characterization of Below-Gap Absorption in Semi-Insulating GaAs:Cr by Magneto-Circular Dichroism Spectrum
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2. Investigation of the electro-optical characteristics of GaAs/AlGaAs multiple quantum well grown by metal-organic vapor phase epitaxy;Journal of Molecular Structure;2023-01
3. Thermodynamically metastable α-, ε- (or κ-), and γ-Ga2O3: From material growth to device applications;APL Materials;2022-06-01
4. Room-Temperature Lasing in a Low-Loss Tamm Plasmon Cavity;ACS Photonics;2020-10-29
5. Monolithic growth of GaAs/Al0.3Ga0.7As multiple quantum well structure on Ge substrate with low defects: theoretical and experimental correlation of the structural and optical properties;Journal of Physics D: Applied Physics;2020-08-05
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