Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor-Reference-Cited by-同舟云学术

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Interaction of traveling current filaments and its relation to a nontrivial thermal breakdown scenario in avalanching bipolar transistor

Published:2009-04-15 Issue:8 Volume:105 Page:084501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mamanee W.,Johnsson D.,Rodin P.,Bychikhin S.,Dubec V.,Stecher M.,Gornik E.,Pogany D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3097305

Reference27 articles.

1. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors

2. Proceedings of the EOS/ESD Symposium;Jensen N.,2003

3. Proceedings of the EOS/ESD Symposium;Mergens M. P. J.,2006

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN;physica status solidi (b);2019-02-19

2. Motion of current filaments in avalanching PIN diodes;Journal of Semiconductors;2013-04

3. Effect of Elevated Ambient Temperature on Thermal Breakdown Behavior in BCD ESD Protection Devices Subjected to Long Electrical Overstress Pulses;IEEE Transactions on Device and Materials Reliability;2012-09

4. Application of transient interferometric mapping method for ESD and latch-up analysis;Microelectronics Reliability;2011-09

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